NTHD3100CT1G parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

NTHD3100CT1G

Description:

MOSFET N/P-CH 20V CHIPFET

Stock:

12980

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.19

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Parameters

Current at 25 ° C - continuous drain (Id)

2.9A,3.2A

Drain source voltage (Vdss)

20V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

2.3nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

165pF @ 10V

On resistance (maximum) for different Ids and Vgs

80 mΩ @ 2.9A,4.5V

Power - maximum

1.1W

Vgs (th) (maximum) for different Ids

1.2V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SMD,feedthrough

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTHD3100CT1G.pdf

NTHD3100CT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12980,Price reference "real-time change" China/Hongkong。 NTHD3100CT1G package/specs, Download NTHD3100CT1G、Datasheet。